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TK15210 MC100LV 14066BP ER100 025EN0 MT907405 2SD2081 E005652
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  Datasheet File OCR Text:
 30 3.5V 10V
20 Vds=5V 15
20
Vgs =2.5V
Id(A)
Id(A)
Vgs =2V 10
10 125C 5 25C
0 0 1 2 3 4 5 Vds(Volts)
0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics
c Figure 1: On-Regions Characteristi s
40 1.6
Vgs=4.5V
Normalize ON-Resistance
Rds(on)(m:)
30 Vgs =2.5V 20 Vgs =4.5V 10
1.4
Id=5A Vgs=2.5V Id=4A
1.2 Vgs=10V Id=7A 1.0
Vgs =10V
0 0 5 10 15 20 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
60 Id=7A 50
1E+01 1E+00 1E-01 125C
Rds(on)(m:)
Is(A)
40 125C
1E-02 1E-03
30
20 25C 10 0 2 4 6 8 Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
25C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd(Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V 4
2000
Id=7A
Capacitance (pF)
1600 1200 800 Crss 400 0
Ciss
Vgs(Volts)
3 2 1 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics
Coss
0
5
10
15
20
25
30
Vds(Volts) Figure 8: Capacitance Characteristics
100.0
Tj(max)=150C Ta=25C Rds(on) limited 10Ps 100Ps 1ms 0.1s 10ms
40 Tj(max)=150C Ta=25C 30
Id (Amps)
Power (W)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=T on/T T j,pk =T a+Pdm.ZTja .RTja RTja =83C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd 0.1 T on T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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